| PART |
Description |
Maker |
| TSAL7600 |
GaAs/GaAlAs IR Emitting Diode in ?5 mm (T-13/4) Package
GaAs/GaAlAs IR Emitting Diode in 庐5 mm (T-13/4) Package
GaAs/GaAlAs IR Emitting Diode in 5 mm (T-13/4) Package
From old datasheet system
GaAs/GaAlAs IR Emitting Diode in ?5 mm (T-13/4) Package
|
Vishay Telefunken
VISAY[Vishay Siliconix]
|
| TSAL7600 |
GaAs/GaAlAs IR Emitting Diode
|
Vishay Siliconix
|
| TSAL5100 |
GaAs/GaAlAs IR Emitting Diode in 5 mm (T-1?) Package
|
Vishay
|
| SE1003-C |
GaAlAs on GaAs infrared emitting diode.
|
NEC Electronics
|
| TSSP4400 |
GaAs/GaAlAs Infrared Emitting Diode in Sideview Package
|
TEMIC Semiconductors
|
| TSAL6400 TSAL640009 |
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
| TSAL730009 |
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
| TSAL6200-ES21 |
TSAL6200 - High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
|
Vishay Semiconductors
|
| TSAL5100 TSAL510008 |
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
| TSAL7200 TSAL720008 |
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
| OP233 OP232 OP231 |
GaAs HERMETIC INFRARED EMITTING DIODES
GaALAs Hermetic Infrared Emitting Diode(铝砷化镓密封红外发光二极工作温度范围-65 125
|
OPTEK Technologies
Optek Technology
|
